Title : ( Monte Carlo Simulation of GaN Submicron n+-n-n+ Diode with AlGaN Heterojunction Cathode )
Authors: Hadi Arabshahi , D. Ghodsi Nahri ,
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Abstract
An ensemble Monte Carlo simulation has been developed to simulate the motion of electrons in a submicron GaN diode with a AlxGa1-xN heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers. Our analysis has also shown that the mean drift velocity for electrons in the channel is about 2×105 ms-1 at bias 4 V. Mean drift velocity in channel decrease with temperature and reach to saturated value about 1.5×105 ms-1.
Keywords
Ensemble Monte carlo; submicron; heterojunction; drift velocity.
@article{paperid:1023160,
author = {Arabshahi, Hadi and D. Ghodsi Nahri},
title = {Monte Carlo Simulation of GaN Submicron n+-n-n+ Diode with AlGaN Heterojunction Cathode},
journal = {International Journal of Engineering Research and Applications},
year = {2011},
volume = {1},
number = {2},
month = {May},
issn = {2248-9622},
pages = {74--77},
numpages = {3},
keywords = {Ensemble Monte carlo; submicron;
heterojunction; drift velocity.},
}
%0 Journal Article
%T Monte Carlo Simulation of GaN Submicron n+-n-n+ Diode with AlGaN Heterojunction Cathode
%A Arabshahi, Hadi
%A D. Ghodsi Nahri
%J International Journal of Engineering Research and Applications
%@ 2248-9622
%D 2011
