The aim of this paper is to consider optical and electrical properties of LEDs with heterostructure of GaN. To do this, two combinations of In0.06Ga0.94N/AlGaN/GaN and In0.2Ga0.8N/AlGaN/GaN were applied as samples. The accomplishment were compared with homostructure of GaN and heterostructure of GaAs. Comparing radiation intensity-current in the samples with that of GaAs results in new perception of structure defects of GaN. It can be claimed that all structure defects of GaN are not recombination centers and some of which are related to radiation. In fact, structure defects of nitride lightemitting diodes are different from

Keywords