Title : ( The Effect of Gate Length on SOI-MOSFETs Based on ZnO Material )
Authors: R. Khoshlahni , Hadi Arabshahi ,
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Abstract
The effect of gate length on the operation of SOI-MOSFET structure based on the ZnO material has been simulated. Three transistors with gate lengths of 2, 2.6 and 3.2 µm are simulated. Simulations show that with a fixed channel length, when the gate length is increased, the output drain current characteristics is decreased and therefore the transistor transconductance decreases. Moreover, with increasing the gate length, the effect of the drain voltage on the drain current is reduced, which results in the reduced drain induced barrier lowering.
Keywords
, ZnO, gatelength, transconductance, drain
@article{paperid:1023171,
author = {R. Khoshlahni and Arabshahi, Hadi},
title = {The Effect of Gate Length on SOI-MOSFETs Based on ZnO Material},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {6},
month = {August},
issn = {2221-8386},
pages = {52--54},
numpages = {2},
keywords = {ZnO; gatelength; transconductance; drain},
}
%0 Journal Article
%T The Effect of Gate Length on SOI-MOSFETs Based on ZnO Material
%A R. Khoshlahni
%A Arabshahi, Hadi
%J International Journal of Science and Advanced Technology
%@ 2221-8386
%D 2011
