Title : ( Comparison of High Field Electron Transport in Wurtzite Phase of GaN and AlGaN )
Authors: Forogh-e-Sadat Tabasi , Hadi Arabshahi ,
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Abstract
The results of an ensemble Monte Carlo simulation of the steady-state and transient electron drift velocity as a function of applied electric field in GaN and AlGaN are presented. The effect of temperature and doping dependencies of electron drift velocity in these structures have been calculated. The following scattering mechanisms, i.e, impurity, polar optical phonon and acoustic phonon are included in the calculation. The maximum electron drift velocity that is obtained at room temperature for 1023 m-3 donor concentration is 2.2×107cm/s for both GaN and AlGaN materials. For high applied electric field, transient electron drift velocity shows a significant overshoot in two semiconductors.
Keywords
, Ensemble Monte Carlo, transient, Overshoot,
@article{paperid:1023174,
author = {Forogh-e-Sadat Tabasi and Arabshahi, Hadi},
title = {Comparison of High Field Electron Transport in Wurtzite Phase of GaN and AlGaN},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {6},
month = {August},
issn = {2221-8386},
pages = {68--72},
numpages = {4},
keywords = {Ensemble Monte Carlo; transient; Overshoot;},
}
%0 Journal Article
%T Comparison of High Field Electron Transport in Wurtzite Phase of GaN and AlGaN
%A Forogh-e-Sadat Tabasi
%A Arabshahi, Hadi
%J International Journal of Science and Advanced Technology
%@ 2221-8386
%D 2011
