Title : ( Comparison of Low Field Electron Transport Properties in CdTe and HgCdTe Semiconductors )
Authors: A. Salehi Shahr-Babaki , Hadi Arabshahi ,
دانلود فایل برای اعضای دانشگاهAccess to full-text not allowed by authors
Abstract
Electron mobility in CdTe and HgCdTe are calculated, by solving Boltzmann equation using iteration model, as a function of temperature for carrier concentrations of 1016, 1017, and 1018 cm-3. Both CdTe and HgCdTe have maximum mobility between 100 and 200 K, depending on the electron density. The theoretical maximum mobility in CdTe and HgCdTe at 300 K are about 1000 and 4400 cm2V-1s-1. We compared the results with experimental data and find reasonable correlation.
Keywords
Iteration Model; ionized impurity scattering;
@article{paperid:1023537,
author = {A. Salehi Shahr-Babaki and Arabshahi, Hadi},
title = {Comparison of Low Field Electron Transport Properties in CdTe and HgCdTe Semiconductors},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {7},
month = {September},
issn = {2221-8386},
pages = {1--6},
numpages = {5},
keywords = {Iteration Model; ionized impurity scattering;},
}
%0 Journal Article
%T Comparison of Low Field Electron Transport Properties in CdTe and HgCdTe Semiconductors
%A A. Salehi Shahr-Babaki
%A Arabshahi, Hadi
%J International Journal of Science and Advanced Technology
%@ 2221-8386
%D 2011
