Title : ( Temperature and Doping Dependencies of Electron Mobility in InN, AlN and GaN )
Authors: P. Kazemi , Hadi Arabshahi ,
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Abstract
Temperature and doping dependencies of electron mobility in InN, AlN and GaN structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the , U and K are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance.
Keywords
, Ensemble Monte Carlo simulation, transient,
@article{paperid:1023538,
author = {P. Kazemi and Arabshahi, Hadi},
title = {Temperature and Doping Dependencies of Electron Mobility in InN, AlN and GaN},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {7},
month = {September},
issn = {2221-8386},
pages = {40--43},
numpages = {3},
keywords = {Ensemble Monte Carlo simulation; transient;},
}
%0 Journal Article
%T Temperature and Doping Dependencies of Electron Mobility in InN, AlN and GaN
%A P. Kazemi
%A Arabshahi, Hadi
%J International Journal of Science and Advanced Technology
%@ 2221-8386
%D 2011
