Temperature and doping dependencies of electron mobility in InP, GaP and Ga0.52In0.48P structures have been calculated using an iteravive technique. The following scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are inculded in the calculation. Ionized imurity scattering has been treated beyound the Born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100K to 500K for each material which is depended to their band structures characteristics. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods

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