The aim of this paper is to consider optical and electrical properties of MOVPE GaN homostruture LEDs. The sample that has been selected for the study, doped with Si and Mg for n and p region of junction, respectively. The V-I and L-I characteristics of this device indicate that diffusion and space charge currents have the main role in luminescence, because in this current range defects levels have been saturated and thus band to band recombination is dominance. According to these analyses, when levels associated with defects are saturated in the smaller current, higher efficiency in converting input electrical power to output optical power is achieved.

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