Title : ( Silicon-layer guided-mode resonance polarizer with 40 nm bandwidth )
Authors: K. J. Lee , R. LaComb , B. Britton , Mehrdad Shokooh-Saremi , H. Silva , E. Donkor , Y. Ding , R. Magnusson ,
دانلود فایل برای اعضای دانشگاهAccess to full-text not allowed by authors
Abstract
Fabrication and characterization of a guided-mode resonance-based polarizer is presented. This polarizer is made by electron-beam patterning a single layer of amorphous silicon on a glass substrate. The fabricated device has high and low transmittance for transverse-electric and transverse-magnetic polarizations, respectively, over a 40-nm wavelength range for normally incident light. Its experimental extinction ratio is 97 : 1 at a central wavelength of 1510 nm.
Keywords
, Guided-mode resonance (GMR), leaky waves, polarizer, thin-film optics.
@article{paperid:1024436,
author = {K. J. Lee and R. LaComb and B. Britton and Shokooh-Saremi, Mehrdad and H. Silva and E. Donkor and Y. Ding and R. Magnusson},
title = {Silicon-layer guided-mode resonance polarizer with 40 nm bandwidth},
journal = {IEEE Photonics Technology Letters},
year = {2008},
volume = {20},
number = {22},
month = {November},
issn = {1041-1135},
pages = {1857--1859},
numpages = {2},
keywords = {Guided-mode resonance (GMR); leaky waves; polarizer; thin-film optics.},
}
%0 Journal Article
%T Silicon-layer guided-mode resonance polarizer with 40 nm bandwidth
%A K. J. Lee
%A R. LaComb
%A B. Britton
%A Shokooh-Saremi, Mehrdad
%A H. Silva
%A E. Donkor
%A Y. Ding
%A R. Magnusson
%J IEEE Photonics Technology Letters
%@ 1041-1135
%D 2008
