Title : ( Effect of Si-Doping Position on Optical Properties of Nitride Quantum Well )
Authors: F. S. Tabasi , H. Haratizadeh , Hadi Arabshahi ,
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Abstract
The effects of Si doping on the emission energy in a set of GaN/AlGaN multiple quantum well (MQW) samples with different position of the dopant layer were studied by means of photoluminescence (PL) measurements. When the doping is in the barrier and in both barrier and well, the MQW emission appears above the GaN band gap, while the sample doped in the well shows a redshifted emission. The redshift is attributed to the self-energy shift of the electron states due to the correlated motion of the electrons exposed to the fluctuating potential of the donor ions.
Keywords
, Emission energy, multiple quantum well, red shift,
@article{paperid:1024783,
author = {F. S. Tabasi and H. Haratizadeh and Arabshahi, Hadi},
title = {Effect of Si-Doping Position on Optical Properties of Nitride Quantum Well},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {9},
month = {November},
issn = {2221-8386},
pages = {110--112},
numpages = {2},
keywords = {Emission energy; multiple quantum well; red shift;},
}
%0 Journal Article
%T Effect of Si-Doping Position on Optical Properties of Nitride Quantum Well
%A F. S. Tabasi
%A H. Haratizadeh
%A Arabshahi, Hadi
%J International Journal of Science and Advanced Technology
%@ 2221-8386
%D 2011
