A carbon nanotube field effect transistor (CNTFET) has been studied based on the Schrodinger-Poisson formalism. To improve the saturation range in the output characteristics, new structures for CNTFETs are proposed. These structures are simulated and compared with the conventional structure. Simulations show that these structures have a wider output saturation range. With this, larger drain-source voltage (Vds) can be used, which results in higher output power. In the digital circuits, higher Vds increases noise immunity.

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