Title : ( Modeling SOI-MOSFET Using Neuro Space Mapping )
Authors: mahdi gordi armaki , Seyed Ebrahim Hosseini , javad haddadnia ,
Full TextAbstract
The drift-diffusion (DD) model is not accurate for simulation of sub-micrometer semiconductor devices. Using RBF NN, a neuro space mapping is proposed to DD model parameters. The DD model with mapped parameters can produce accurate simulation results of the hydrodynamic model. Simulations of a SOI-MOSFET confirm the ability of the proposed method for submicron device simulation
Keywords
, drift-diffusion, hydrodynamic mode, nero-space mapping, MOSFET
@inproceedings{paperid:1026977,
author = {Mahdi Gordi Armaki and Hosseini, Seyed Ebrahim and Javad Haddadnia},
title = {Modeling SOI-MOSFET Using Neuro Space Mapping},
booktitle = {IEEE International Conference on Electron Devices and Solid-State Circuits},
year = {2009},
keywords = {drift-diffusion; hydrodynamic mode; nero-space mapping; MOSFET},
}
%0 Conference Proceedings
%T Modeling SOI-MOSFET Using Neuro Space Mapping
%A Mahdi Gordi Armaki
%A Hosseini, Seyed Ebrahim
%A Javad Haddadnia
%J IEEE International Conference on Electron Devices and Solid-State Circuits
%D 2009
