An iteration method has been developed for the study of electron transport properties in GaAs taking into account the different scattering effects. It is shown that electron-phonon scattering affects substantially the electron energy distribution function and transport properties in bulk GaAs. The following scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon, piezoelectric are included in the calculation. Ionized impurity scattering has been treated beyound the Born approximation using the phase-shift analysis. The amount of neutron energy deposition in GaAs crystal of different sizes and at different distances from a neutron source has also been evaluated by using MCNP code. Then, the rate of atoms displacement in the crystals has been calculated using NRT Model. The damage to crystal is proportional to the energy deposition of neutron directly. Results show that number of atoms displacement in the crystal is related to the neutron radiation damage and increased by enlarging of crystal size.

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