Title : ( Comparison of Low Field Electron Transport Properties in Compounds of groups III-V Semiconductors by Solving Boltzmann Equation Using Iteration Model )
Authors: Hadi Arabshahi , A. Pashaei , M. H .Tayarani ,
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Abstract
Temperature and doping dependencies of electron mobility in InP, InAs,GaP and GaAs structures have been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. The electron mobility decreases monotonically as the temperature increase from 100 K to 500 K for each material which is depended to their band structures characteristics. The low temperature value of electron mobility increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.
Keywords
Iterative technique; Ionized impurity scattering; Born approximation; electron mobility
@article{paperid:1029616,
author = {Arabshahi, Hadi and A. Pashaei and M. H .Tayarani},
title = {Comparison of Low Field Electron Transport Properties in Compounds of groups III-V Semiconductors by Solving Boltzmann Equation Using Iteration Model},
journal = {International Journal of Engineering Inventions},
year = {2012},
volume = {1},
number = {2},
month = {July},
issn = {2278-7461},
pages = {56--61},
numpages = {5},
keywords = {Iterative technique; Ionized impurity scattering; Born approximation; electron mobility},
}
%0 Journal Article
%T Comparison of Low Field Electron Transport Properties in Compounds of groups III-V Semiconductors by Solving Boltzmann Equation Using Iteration Model
%A Arabshahi, Hadi
%A A. Pashaei
%A M. H .Tayarani
%J International Journal of Engineering Inventions
%@ 2278-7461
%D 2012
