Title : ( Rectifying behavior of graphene/h-boron-nitride heterostructure )
Authors: Sayyed Mohsen Modarresi Saryazdi , Mahmood Rezaee Roknabadi , Nasser Shahtahmassebi ,
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Abstract
The rectifyingbehaviorofasimplegraphene/boron-nitrideheterostructurebetweentwosemi-infinite electrodesisinvestigatedbyusingthenon-equilibriumGreen’sfunctionmethod.Alsoasimple analyticalmodelisusedtoexplainthecurrent–voltagecharacteristicofatypicalheterostructure. The Hamiltonianofnanostructureiswritteninthetight-bindingmodelandtheinteractionof heterostructurewithleftandrightleadsisstudiedinthewide-bandapproximation.Thecurrent– voltagecurveofgraphene/boron-nitrideshowsanasymmetricbehaviorandnegative-differential- resistanceinthepositivebiasvoltagewhichisexplainedinthesimplemodel.Byincreasingtheribbon width, currentincreasesandthepeak-to-valleycurrentratiodecreases.AlltheG/h-BNshowsalarge rectificationratioinacertainvoltageregion.Therectificationbehaviorinthehetero-junctionisrelated to thebarrierpotentialattheinterfaceoftwostructures.
Keywords
, Graphene/h, boron, nitride Green’s function NDR Rectification ratio
@article{paperid:1035240,
author = {Modarresi Saryazdi, Sayyed Mohsen and Rezaee Roknabadi, Mahmood and Shahtahmassebi, Nasser},
title = {Rectifying behavior of graphene/h-boron-nitride heterostructure},
journal = {Physica B: Condensed Matter},
year = {2013},
volume = {415},
number = {1},
month = {January},
issn = {0921-4526},
pages = {62--66},
numpages = {4},
keywords = {Graphene/h-boron-nitride
Green’s function
NDR
Rectification ratio},
}
%0 Journal Article
%T Rectifying behavior of graphene/h-boron-nitride heterostructure
%A Modarresi Saryazdi, Sayyed Mohsen
%A Rezaee Roknabadi, Mahmood
%A Shahtahmassebi, Nasser
%J Physica B: Condensed Matter
%@ 0921-4526
%D 2013
