Solid State Communications, ( ISI ), Volume (168), No (1), Year (2013-6) , Pages (1-5)

Title : ( Vortex flux pinning mechanism and enhancement of in-field Jc in succinic acid doped MgB2 )

Authors: Shaban Reza Ghorbani , M. Darini , X.L. Wang , M.S.A. Hossain , S.X. Dou ,

Citation: BibTeX | EndNote

Abstract

The field dependence of the resistivity and the critical current density, Jc(B), ofMgB2 doped with10wt% wet and dry succinic acid have been investigated by magnetic measurements.The dry succinic acid significantly enhanced the upper critical field, the irreversibility field, and the Jc(B) compared to the wet succinic acid doped MgB2 and the pure MgB2. The field dependence of Jc(B) was analyzed within the collective pinning model. The observed temperature dependence of the crossover field, Bsb(T), from the single vortex to the small vortex bundle pinning regime shows that flux pinning a rising from variation in the critical temperature, δTc, is the dominant mechanism for the wet sample over the whole studied temperature range, while there is a competition between δTc pinning and the pinning from variation in the mean free path, δl, for the dry sample.

Keywords

Succinic acid doped MgB2; Critical current density; Flux pinning mechanism
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@article{paperid:1035333,
author = {Ghorbani, Shaban Reza and M. Darini and X.L. Wang and M.S.A. Hossain and S.X. Dou},
title = {Vortex flux pinning mechanism and enhancement of in-field Jc in succinic acid doped MgB2},
journal = {Solid State Communications},
year = {2013},
volume = {168},
number = {1},
month = {June},
issn = {0038-1098},
pages = {1--5},
numpages = {4},
keywords = {Succinic acid doped MgB2; Critical current density; Flux pinning mechanism},
}

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%0 Journal Article
%T Vortex flux pinning mechanism and enhancement of in-field Jc in succinic acid doped MgB2
%A Ghorbani, Shaban Reza
%A M. Darini
%A X.L. Wang
%A M.S.A. Hossain
%A S.X. Dou
%J Solid State Communications
%@ 0038-1098
%D 2013

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