IEEE Transactions on Electron Devices, ( ISI ), Volume (52), No (9), Year (2005-9) , Pages (2108-2111)

Title : ( Small-Signal Characterization of SiGe-HBT<tex>$f_T$</tex>-Doubler up to 120 GHz )

Authors: Mojtaba Joodaki ,

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Abstract

In this brief, small-signal characterizations of selectively implanted collector (SIC) and non-SIC SiGe-heterojunction bipolar transistors (HBT) fT-doublers up to 120 GHz are measured, analyzed, and compared with those of the corresponding single devices. The measured results confirm a great improvement in transit frequency with almost no considerable decrease in the maximum stable gain/maximum available gain, and maximum oscillation frequency. Since the fT-doubler can be used easily instead of a single transistor, a much higher transit frequency and RF power can be achieved while using a technology with a moderate fT.

Keywords

, ft-doubler, S-parameter measurements, SiGe-HBT, transit frequency
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@article{paperid:1037011,
author = {Joodaki, Mojtaba},
title = {Small-Signal Characterization of SiGe-HBT<tex>$f_T$</tex>-Doubler up to 120 GHz},
journal = {IEEE Transactions on Electron Devices},
year = {2005},
volume = {52},
number = {9},
month = {September},
issn = {0018-9383},
pages = {2108--2111},
numpages = {3},
keywords = {ft-doubler; S-parameter measurements; SiGe-HBT; transit frequency},
}

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%0 Journal Article
%T Small-Signal Characterization of SiGe-HBT<tex>$f_T$</tex>-Doubler up to 120 GHz
%A Joodaki, Mojtaba
%J IEEE Transactions on Electron Devices
%@ 0018-9383
%D 2005

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