Title : ( Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction )
Authors: saeid marjani , Seyed Ebrahim Hosseini , رحیم فائز ,
Full TextAbstract
The comprehensive optical-electrical-gain-thermal self-consistent model of the 1.55 μm AlGaInAs Photonic Crystal vertical cavity surface emitting diode lasers (PhC VCSELs) with buried tunnel junction (BTJ) has been applied to optimize its threshold characteristics. It shows that, for 5 μm devices, the room temperature (RT) threshold current equal to only 0.59 mA and maximum operating temperature equal to as much as 380 K. Results suggest that, the 5 μm AlGaInAs PhC VCSELs seem to be the most optimal ones for light sources in high performance optical communication systems
Keywords
, VCSEL, threshold current, photonic crystal, AlGaInAs
@inproceedings{paperid:1037966,
author = {Marjani, Saeid and Hosseini, Seyed Ebrahim and رحیم فائز},
title = {Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction},
booktitle = {بیست و یکمین کنفرانس مهندسی برق ایران},
year = {2013},
location = {مشهد, IRAN},
keywords = {VCSEL; threshold current; photonic crystal; AlGaInAs},
}
%0 Conference Proceedings
%T Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction
%A Marjani, Saeid
%A Hosseini, Seyed Ebrahim
%A رحیم فائز
%J بیست و یکمین کنفرانس مهندسی برق ایران
%D 2013
