Title : ( Analysis and optimization of Tunnel FET with Band gap Engineering )
Authors: M. R. Salehi , E. Abiri , Seyed Ebrahim Hosseini , B. Dorostkar ,
Full TextAbstract
in this paper a high performance double gate tunnel field effect transistor (DG-TFET) is proposed. Band gap engineering is achieved in order to improve the device performance. This novel TFET is formed from variable band gap materials with 20 nm channel length to enhance on current and reach to low off-current. With precise selection of mole fraction in materials,AlGaAs and InGaAs are designated to all region in the device and important characterises of TFET are optimized. Low sub threshold swing below 60 mv/dec Ion/Ioff ratio as high as 1e12 are the result of the simulation
Keywords
, band-to-band tunneling, high-k dielectric, Double-gate, gated p-i-n diode, sub threshold swing, tunneling transistor
@inproceedings{paperid:1037968,
author = {M. R. Salehi and E. Abiri and Hosseini, Seyed Ebrahim and B. Dorostkar},
title = {Analysis and optimization of Tunnel FET with Band gap Engineering},
booktitle = {بیست و یکمین کنفرانس مهندسی برق ایران},
year = {2013},
location = {مشهد, IRAN},
keywords = {band-to-band tunneling; high-k dielectric; Double-gate; gated p-i-n diode; sub threshold swing;
tunneling transistor},
}
%0 Conference Proceedings
%T Analysis and optimization of Tunnel FET with Band gap Engineering
%A M. R. Salehi
%A E. Abiri
%A Hosseini, Seyed Ebrahim
%A B. Dorostkar
%J بیست و یکمین کنفرانس مهندسی برق ایران
%D 2013
