As the gate length of MOSFETs reduces to sub-micron and deep sub-micron, the device parameters, especially DC parameters, cannot be extracted easily. In this paper, characterization and parameter extraction of an n-MOS with a gate length of 58nm and a gate width of 5μm are successfully performed. The extracted parameters presented in this work include: threshold voltage, effective channel length, series resistance, trans-conductance and onresistance. It should be noted that to reduce the effect of the halo implant on the device mobility and to minimize the mobility variation, the Leff extraction is done in sub threshold region. Furthermore, we have been able to extract the source and drain resistances separately.

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