This paper presents an analytical model for the potential distribution of a p-n-i-n tunneling field effect transistor (TFET). Using the potential distribution, the tunneling drain current is derived analytically by integrating the band-to-band tunneling generation rate over the device volume. According to our knowledge, there is no analytical analysis for this structure in the literature, and this is the first analytical model proposed for a p-n-i-n TFET structure. The proposed analytical model is valid at edvia numerical results obtained from device simulations based on non-local band-to-band tunneling model

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