Title : ( Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors )
Authors: saeid marjani , Seyed Ebrahim Hosseini ,
Full TextAbstract
The radio frequency (RF) and stability performance of double-gate (DG) extended source tunneling field-effect transistors (TFETs) are evaluated by extracting RF parameters like cut-off frequency (ft), maximum oscillations frequency (fmax) and stability factor.
Keywords
, radio frequency (RF); stability factor; nonquasistatic (NQS); extended source; tunneling field, effect transistor (TFET)
@inproceedings{paperid:1049140,
author = {Marjani, Saeid and Hosseini, Seyed Ebrahim},
title = {Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors},
booktitle = {بیست و سومین کنفرانس مهندسی برق ایران},
year = {2015},
location = {تهران, IRAN},
keywords = {radio frequency (RF); stability factor; nonquasistatic (NQS); extended source; tunneling field-effect transistor (TFET)},
}
%0 Conference Proceedings
%T Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors
%A Marjani, Saeid
%A Hosseini, Seyed Ebrahim
%J بیست و سومین کنفرانس مهندسی برق ایران
%D 2015
