This paper presents a radio-frequency (RF) small-signal model for the hetero-gate-dielectric p-n-p-n tunnel field-effect transistor (HG p-n-p-n TFET) that includes the charge conservation capacitance and the substrate parameters. The HG p-n-p-n TFET is evaluated in terms of various RF parameters, including the cut-off frequency, the maximum oscillation frequency, capacitances, resistances, conductances, and transport time delay. The extracted small-signal parameters and RF performance values are compared with those of the low-j p-n-p-n TFET. A nonquasistatic RF small-signal model has been used along with SPICE simulations and small-signal parameters that were extracted from the simulated device Y-parameters to simulate the HG p-n-p-n TFET. It is confirmed using the Y-parameters and the extracted parameters that this model with the extracted charge conservation capacitance and substrate parameters is valid in the high frequency range up to 100 GHz. In addition, it is shown that a significant circuit performance error may be introduced if the charge conservation capacitance and the substrate parameters are not considered appropriately

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