Title : ( Analysis of Radio Frequency and Stability Performance on Double-Gate Extended Source Tunneling Field-Effect Transistors )
Authors: saeid marjani , Seyed Ebrahim Hosseini ,
Full TextAbstract
The radio-frequency (RF) and stability performance of double-gate (DG) extended source tunneling field-effect transistors (TFETs) are evaluated by extracting RF parameters like cut-off frequency, maximum oscillation frequency, and stability factor.
Keywords
Radio frequency; stability factor; nonquasistatic (NQS); extended source; TFET
@inproceedings{paperid:1049305,
author = {Marjani, Saeid and Hosseini, Seyed Ebrahim},
title = {Analysis of Radio Frequency and Stability Performance on Double-Gate Extended Source Tunneling Field-Effect Transistors},
booktitle = {بیست و سومین کنفرانس مهندسی برق ایران، 1394، دانشگاه صنعتی شریف},
year = {2015},
location = {تهران, IRAN},
keywords = {Radio frequency; stability factor; nonquasistatic (NQS); extended source; TFET},
}
%0 Conference Proceedings
%T Analysis of Radio Frequency and Stability Performance on Double-Gate Extended Source Tunneling Field-Effect Transistors
%A Marjani, Saeid
%A Hosseini, Seyed Ebrahim
%J بیست و سومین کنفرانس مهندسی برق ایران، 1394، دانشگاه صنعتی شریف
%D 2015
