Title : ( Analytical modeling of potential distribution in trigate SOI MOSFETs )
Authors: Hamdam Ghanatian , Seyed Ebrahim Hosseini ,
Full TextAbstract
In this paper a new 3-D analytical model for the potential distribution in nano-scaled lightly doped trigate silicon on insulator MOSFETs in the subthreshold regime is proposed. This model is derived by solving 3-D Poisson's equation and using parabolic potential distribution assumption between lateral gates.
Keywords
, analytical model, trigate SOI MOSFET, Poisson equation, parabolic potential distribution
@inproceedings{paperid:1049809,
author = {Ghanatian, Hamdam and Hosseini, Seyed Ebrahim},
title = {Analytical modeling of potential distribution in trigate SOI MOSFETs},
booktitle = {بیست و سومین کنفرانس مهندسی برق ایران 94},
year = {2015},
location = {تهران, IRAN},
keywords = {analytical model; trigate SOI MOSFET; Poisson equation; parabolic potential distribution},
}
%0 Conference Proceedings
%T Analytical modeling of potential distribution in trigate SOI MOSFETs
%A Ghanatian, Hamdam
%A Hosseini, Seyed Ebrahim
%J بیست و سومین کنفرانس مهندسی برق ایران 94
%D 2015
