Title : ( A Collector-Up SiGe-HBT for High Frequency Applications )
Authors: Mojtaba Joodaki ,
دانلود فایل برای اعضای دانشگاهAccess to full-text not allowed by authors
Abstract
A new method for realization of a collector-up SiGe-HBT on SOI substrate for high frequency applications is introduced and its dc and ac characteristics are predicted using a two dimensional device simulator. The simulation results show considerable improvements in all aspects of dc current gain, fT, fmax, and maximum available gain/maximum stable gain (MSG/MAG) in comparison with a state of the art emitter-up SiGe-HBT with similar doping profile and germanium content. Another advantage of common-emitter collector-up transistor is that the emitter is connected to the ground and the substrate capacitor is shorted. This provides a higher frequency performance for circuit designs.
Keywords
, SiGe HBTs; RFapplications; collector, up bipolar transistor; RF integrated circuits.
@inproceedings{paperid:1053993,
author = {Joodaki, Mojtaba},
title = {A Collector-Up SiGe-HBT for High Frequency Applications},
booktitle = {German Microwave Conference - GeMiC 2006 -},
year = {2006},
location = {Karlsruhe, GERMANY},
keywords = {SiGe HBTs; RFapplications; collector-up bipolar
transistor; RF integrated circuits.},
}
%0 Conference Proceedings
%T A Collector-Up SiGe-HBT for High Frequency Applications
%A Joodaki, Mojtaba
%J German Microwave Conference - GeMiC 2006 -
%D 2006
