Title : ( A New Graphene Nanoribbon based Resonant Tunneling Diodes using BN Quantum Well )
Authors: farshad mohajer , Seyed Ebrahim Hosseini ,
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Abstract
Negative Differential Resistance (NDR) is a well known phenomenon in I-V characteristic of some electron devices such as Resonant Tunneling Diodes (RTDs), Esaki diode and resonant tunneling transistors. In this article a Double Barrier Quantum Well structures (DBQW) resonant tunneling diode has been proposed based on graphene nanoribbon and hexagonal- Boron Nitride. Three different channel RTD structures constructed from ZGNRs are proposed. In these structures, highest peak current of 2.1 μA, and lowest valley current 100nA is achieved. The transport properties of DBQW are explored by Non-Equilibrium Green’s-Function (NEGF) formalism
Keywords
component; Resonant Tunneling Diodes(RTDs); Boron Nitide(BN); zigzag graphene nanoribbon(GNR).
@inproceedings{paperid:1076918,
author = {Mohajer, Farshad and Hosseini, Seyed Ebrahim},
title = {A New Graphene Nanoribbon based Resonant Tunneling Diodes using BN Quantum Well},
booktitle = {بیست و هفتمین کنفرانس مهندسی ایران},
year = {2019},
location = {یزد, IRAN},
keywords = {component; Resonant Tunneling Diodes(RTDs); Boron Nitide(BN); zigzag graphene nanoribbon(GNR).},
}
%0 Conference Proceedings
%T A New Graphene Nanoribbon based Resonant Tunneling Diodes using BN Quantum Well
%A Mohajer, Farshad
%A Hosseini, Seyed Ebrahim
%J بیست و هفتمین کنفرانس مهندسی ایران
%D 2019
