In this article, coupled photo-thermoelasticity analysis is carried out using an analytical method in a semiconducting micro/nano beam resonator, considering Green – Naghdi theory (with energy dissipation) and small scale effects. The governing equations for temperature and displacement fields are derived using Eringen nonlocal theory combined with Rayleigh beam theory. One end of the assumed semiconducting MEMS/NEMS is excited by three types of suddenly increasing carrier density and temperature as the plasma and thermal shock loading. The transient behaviours of carrier density field are studied and the effects of disturbances in plasma field on other fields including temperature and deflection are obtained using the proposed analytical solution. The presented analytical solution is based on Laplace transform. To find the dynamic and transient behaviours of fields’ variables in time domain, an inversion Laplace technique is utilized, which is called Talbot method. The effects of small scale parameter and dimensions of the semiconducting micro/nano beam on the dynamic behaviours of fields’ variables are discussed in detail. The axial wave propagation and the distribution of fields’ variables along axial direction are studied at various times.

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