Title : ( A Distributed Power Amplifier Design with a High Power Gain )
Authors: Elham Amiri , Mojtaba Joodaki , Mehdi Forouzanfer , Geunter Kompa ,
Full TextAbstract
In this paper we present a distributed power amplifier that has a good gain-bandwidth product in comparison with other recent discrete distributed power amplifiers. A TGF2023-01 bare die transistor with .25μm GaN HEMT technology is utilized in our work. Our distributed power amplifier provides a better matching that leads to a more flat frequency response and uses tapering technique for both gate and drain transmission lines to boost the output power and efficiency. This design demonstrates a 41.6 dBm saturated power and a 22.2 dB small signal gain from DC to 3.4 GHz with a power added efficiency (PAE) of 27%.
Keywords
, Power amplifiers, Gain, Bandwidth, Gallium nitride, Transistors, Microwave theory and techniques, Microwave integrated circuits
@inproceedings{paperid:1085027,
author = {Amiri, Elham and Joodaki, Mojtaba and مهدی فروزانفر and گونتر کومپا},
title = {A Distributed Power Amplifier Design with a High Power Gain},
booktitle = {2020 28th Iranian Conference on Electrical Engineering (ICEE)},
year = {2020},
location = {تبریز, IRAN},
keywords = {Power amplifiers; Gain; Bandwidth; Gallium nitride; Transistors; Microwave theory and techniques;
Microwave integrated circuits},
}
%0 Conference Proceedings
%T A Distributed Power Amplifier Design with a High Power Gain
%A Amiri, Elham
%A Joodaki, Mojtaba
%A مهدی فروزانفر
%A گونتر کومپا
%J 2020 28th Iranian Conference on Electrical Engineering (ICEE)
%D 2020
