The prominent method used for altering the negative differential resistance (NDR) of nanoribbon devices is changing nanoribbon structures, which complicates the design and fabrication process. To solve such problems, for the first time, the present study proposes a novel and tunable method – Multiple-Gate Method (MGM) – for the NDR engineering of nanoribbon devices. Following a universal logic, MGM can be applied to all types of nanoribbon materials. Substantially, it can be applied to bulk devices by taking into account proper considerations. At the beginning of the paper, novel structures based on defect engineering of nanoribbons are presented for the NDR engineering of Phosphorene Nanoribbons (PNR) due to the lack of research on this domain of this new material. Then, the multiple-gate method is proposed for the NDR engineering of the PNRs as an alternative to defect engineering.

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