Journal of Electronic Materials, Volume (49), No (9), Year (2020-9) , Pages (5638-5646)

Title : ( Impact of Hetero-Dielectric Ferroelectric Gate Stack on Analog/RF Performance of Tunnel FET )

Authors: Malihe Zare , fatemeh peyravi , Seyed Ebrahim Hosseini ,

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Abstract

We have investigated the characteristics of a hetero-dielectric ferroelectric tunnel (HD-FeTFET). Extensive simulations show that using a hetero-dielectric gate architecture in the lateral direction (non-ferroelectric/ferroelectric/non-ferroelectric) results in more desirable analog/RF characteristics. The proposed structure is compared with conventional tunnel field effect transistors (TFETs) and ferroelectric TFET (FeTFET). Simulation results manifest that HD-FeTFET is superior to other compared structures, and benefits from both ferroelectric and hetero-dielectric structure. Negative capacitance effect in ferroelectric causes a step-up voltage transformer, as a result the subthreshold swing decreases. Owing to two different dielectric constants in the hetero-dielectric structure, the electric field enhances; thereby, the on-state current increases. In this paper, important analog/RF figures of merit, such as cut-off frequency (fT), maximum oscillation frequency (fmax), transconductance frequency product, and intrinsic time delay (s), are investigated. Also, linearity parameters including VIP2, VIP3, IIP3, and the 1-dB compression point are considered. We achieve average sub-threshold swing of 14 mV for 5 decades for HD-FeTFET, and is improved by 48% and 30% for TFET and FeTFET, respectively. Moreover, the ION/IOFF ratio and the on-state current for the proposed structure are 1011 and 5.3 9 107 (A/lm), respectively.

Keywords

, Ferroelectric TFET, hetero-dielectric, analog/RF figures-of-merit, linearity parameters
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@article{paperid:1086904,
author = {Zare, Malihe and Peyravi, Fatemeh and Hosseini, Seyed Ebrahim},
title = {Impact of Hetero-Dielectric Ferroelectric Gate Stack on Analog/RF Performance of Tunnel FET},
journal = {Journal of Electronic Materials},
year = {2020},
volume = {49},
number = {9},
month = {September},
issn = {0361-5235},
pages = {5638--5646},
numpages = {8},
keywords = {Ferroelectric TFET; hetero-dielectric; analog/RF figures-of-merit; linearity parameters},
}

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%0 Journal Article
%T Impact of Hetero-Dielectric Ferroelectric Gate Stack on Analog/RF Performance of Tunnel FET
%A Zare, Malihe
%A Peyravi, Fatemeh
%A Hosseini, Seyed Ebrahim
%J Journal of Electronic Materials
%@ 0361-5235
%D 2020

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