In this paper, the photo-thermoelastic wave propagation analysis in a semiconductor nanorod resonator under laser excitation employing the strain-gradient Moore–Gibson–Thompson (MGT) and Love–Bishop theories is presented, which is for the first time to the authors’ knowledge. The governing equations of the photo-thermoelastic wave propagation are derived using the proposed novel size-dependent MGT heat conduction model, strain-gradient and Love–Bishop theories. The size-dependent MGT coupled photo-thermoelasticity theory is developed by taking into account of five nano-scale parameters for the first time, which is employed to derive the governing equations. The governing equations are converted into the Laplace-transformed domain and then analytical solution is obtained for a semiconductor Love–Bishop nanorod resonator subjected to plasma and thermal shock loadings. To obtain the transient field variables in the time-domain, the Talbot Laplace-inversion technique is employed. The size-effects on the propagation of the photo-thermoelastic waves are studied in detail. The transient behaviors of the displacement, temperature and carrier density (plasma density) fields are also investigated with considering the nano-scale effects by performing the parametric studies. The effects of the carrier density, the relaxation time in the size-dependent MGT theory and the nano-scale parameters on the plasma-affected photo-thermoelastic wave propagation are revealed. Numerical examples demonstrate that the derived governing equations and also the proposed analytical solutions can be employed to determine the realistic behaviors of the field variables in a semiconductor Love–Bishop nanorod resonator under laser shock loading with considering the nano-scale effects.

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