IEEE Transactions on Electron Devices, ( ISI ), Volume (67), No (11), Year (2020-11) , Pages (5209-5215)

Title : ( Armchair Graphene Nanoribbon Gate-Controllable RTD With Boron Nitride Barriers )

Authors: Mohamad Hasan Ghasemian Monfared , Seyed Ebrahim Hosseini ,

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Abstract

Resonant-tunneling diodes (RTDs) based on graphene nanoribbons have attracted the attention of many researchers recently. In this article, we propose a new RTD based on graphene nanoribbon/h-boron nitride. In this structure, two hexagonal boron nitride (h-BN) slices are used as potential barriers to forma double-barrier structure, due to the higher bandgap of h-BN. Two gate electrodes are used in order to control the peak-to-valley current ratio (PVR). In the proposed structure, a PVR of 1.11 at a valley current of 5.56 μA and a PVR of 2.41 at a valley current of 0.49 μA have been obtained that are better than many reported structures in the literature. The proposed structure is a suitable candidate for use in various high current RTD-based applications. A numerical tight-binding model coupled with nonequilibrium Green’s function formalism is used for simulation and studying electronic properties of this structure.

Keywords

, Armchair graphene, hexagonal boron nitride (h-BN), resonant-tunneling diode (RTD).
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@article{paperid:1092517,
author = {Ghasemian Monfared, Mohamad Hasan and Hosseini, Seyed Ebrahim},
title = {Armchair Graphene Nanoribbon Gate-Controllable RTD With Boron Nitride Barriers},
journal = {IEEE Transactions on Electron Devices},
year = {2020},
volume = {67},
number = {11},
month = {November},
issn = {0018-9383},
pages = {5209--5215},
numpages = {6},
keywords = {Armchair graphene; hexagonal boron nitride (h-BN); resonant-tunneling diode (RTD).},
}

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%0 Journal Article
%T Armchair Graphene Nanoribbon Gate-Controllable RTD With Boron Nitride Barriers
%A Ghasemian Monfared, Mohamad Hasan
%A Hosseini, Seyed Ebrahim
%J IEEE Transactions on Electron Devices
%@ 0018-9383
%D 2020

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