An important issue in devices with negative differential resistance (NDR) in I–V characteristics is the ability to control device characteristics. In this paper, a novel double-gate AGNR/h-BN FET with a tunable NDR in the I–V characteristic is proposed for the first time. An armchair GNR is used in this device with length of 6.4 nm and width of 2.2 nm. The insulator used in this device is silicon oxynitride due to higher dielectric constant compared with silicon dioxide in order to improve gate control, and more feasibility than high-k materials since it has native silicon oxide. The interesting feature of this device is its ability to tune NDR in the output characteristics. It is observed that positive gate-source voltages reduce the peak to valley current differences and, negative gate-source voltages increase the peak to valley current differences. By tuning the NDR, the biasing condition and even the oscillation condition of the transistor can be tuned when it is used as an oscillator, for example. In addition, the current and power consumption of the device can be controlled.

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