The commonly used method to engineer the negative differential resistance (NDR) of nanoribbon materials and devices is engineering nanoribbon structures, suffering from complicated design and substantial fabrication process. Moreover, all methods utilized for the device NDR engineering engineer only resonant or non-resonant components of current. For the first time, to solve such inefficiencies, the present research proposes a new and tunable method for the NDR engineering of nanoribbon materials and structures by engineering both resonant and non-resonant components of current simultaneously. This method is termed Complementary Tunable Resonant Tunneling (CTRT) Method. Furthermore, the circuit model of the proposed structure designed by the CTRT method is presented, indicating that this method does not considerably impact the total capacitance of the device. Firstly, owing to the neglected research field of this emerging 2D material, new structures are proposed on the basis of its defect engineering for the T-Graphene Nanoribbon (TGNR) NDR engineering. The CTRT method is then offered for the TGNRs’ NDR engineering as an effective alternative to defect engineering.

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