نمایش نتایج جستجو برای
نام مجله: International Journal of Engineering Research and Applications
موارد یافت شده: 5
1 - Calculation of High Field Electron Transport Properties in InN in Comparison with GaN (چکیده)2 - First Principle Studies of Electronic Properties of Nitrogen-doped Endohedral Fullerene (چکیده)
3 - First principle study of Lithium impurity effect on energy gap of trans-polyacetylene chain (چکیده)
4 - Monte Carlo Simulation of GaN Submicron n+-n-n+ Diode with AlGaN Heterojunction Cathode (چکیده)
5 - Application of the Genetic Algorithm to investigate nanostructures of GaAs/AlGaAs quantum wells (چکیده)
