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نام مجله: International Journal of Engineering Research and Applications

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موارد یافت شده: 5

1 - Calculation of High Field Electron Transport Properties in InN in Comparison with GaN (چکیده)
2 - First Principle Studies of Electronic Properties of Nitrogen-doped Endohedral Fullerene (چکیده)
3 - First principle study of Lithium impurity effect on energy gap of trans-polyacetylene chain (چکیده)
4 - Monte Carlo Simulation of GaN Submicron n+-n-n+ Diode with AlGaN Heterojunction Cathode (چکیده)
5 - Application of the Genetic Algorithm to investigate nanostructures of GaAs/AlGaAs quantum wells (چکیده)