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نویسنده: M. R. BENAM

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موارد یافت شده: 9

1 - Density Functional Theory of Nitrogen-doped endohedral Fullerenes (چکیده)
2 - Calculation of High Field Electron Transport Properties in InN in Comparison with GaN (چکیده)
3 - First Principle Studies of Electronic Properties of Nitrogen-doped Endohedral Fullerene (چکیده)
4 - First principle study of Lithium impurity effect on energy gap of trans-polyacetylene chain (چکیده)
5 - Study of High Field Electron Transport in AlN and AlGaN Semiconductors Using Monte Carlo Simulation (چکیده)
6 - Growth of MnCl2.4H2O crystals and measurement the exact percent of cobalt impurities in the crystal, using radioactive isotopes of 54MN,60Co,57Co and NMRON technique. (چکیده)
7 - COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING (چکیده)
8 - A SHOCK-CAPTURING UPWIND DISCRETIZATION METHOD FOR CHARACTERIZATION OF SiC MESFETs (چکیده)
9 - DISCRETIZATION METHOD OF HYDRODYNAMIC EQUATIONS FOR SIMULATION OFGaNMESFETs (چکیده)