Title : ( COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING )
Authors: Mahmood Rezaee Roknabadi , Hadi Arabshahi , M. R. Benam ,
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Abstract
Comparison of Low Field Electron Transport in SiC and GaN Structures for High-Power and High-Temperature Device Modeling
Keywords
, iterative, Relaxation-time
@article{paperid:1010094,
author = {Rezaee Roknabadi, Mahmood and Arabshahi, Hadi and M. R. Benam},
title = {COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING},
journal = {Modern Physics Letters B},
year = {2008},
volume = {22},
number = {13},
month = {August},
issn = {0217-9849},
pages = {1357--1366},
numpages = {9},
keywords = {iterative; Relaxation-time},
}
%0 Journal Article
%T COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING
%A Rezaee Roknabadi, Mahmood
%A Arabshahi, Hadi
%A M. R. Benam
%J Modern Physics Letters B
%@ 0217-9849
%D 2008
