Temperature and doping dependencies of electron mobility in ZnO semiconductor has been calculated using an iterative technique. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric, and electron-plasmon are included in the calculation. It is shown that electron-plasmon scattering influence substantially the low-field electron mobility in bulk ZnO. We found that the electron mobility decreases monotonically as the temperature increases from 100K to 600K. The low temperature value of the electron mobility increases significantly as the doping concentration is increased. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.

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