A hydrodynamic approach is used to illustrate hot-electron and intervalley transfer effects in ZnO MESFET. The model is based on the solutions of the highly coupled non-linear partial differential equations of the full hydrodynamic model. These solutions allow to calculate the electron drift velocity and other device parameters as a function of the applied electric field. Using hydrodynamic method our calculation results show that due to the high drain current density we can expect ZnO devices have superior high power and high gain performance. Our results of numerical calculations are in fair agreement with other theoretical or experimental methods.

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