Title : ( A 0.8V ΔΣ modulator using DTMOS technique )
Authors: Mohammad Maymandi Nejad , Manoj Sachdev ,
Full TextAbstract
A 0.8V second order ∆Σ modulator is designed in 0.18µm bulk CMOS technology. Dynamic threshold MOSFET (DTMOS) technique is used to enhance the performance of the circuit building blocks at very low supply voltage. Schematic and post layout simulation results are provided. In case of the amplifier with the embedded CMFB, the measurement results are presented. The modulator can achieve a SNR of approximately 80dB with an oversampling ratio (OSR) of 200 and consumes a power of 460µW.
Keywords
, CMOS, DTMOS, Delta-Sigma Modulator, low voltage
@inproceedings{paperid:1011567,
author = {Maymandi Nejad, Mohammad and Manoj Sachdev},
title = {A 0.8V ΔΣ modulator using DTMOS technique},
booktitle = {IEEE International Symposium on Circuits and Systems-ISCAS 2005},
year = {2005},
keywords = {CMOS; DTMOS; Delta-Sigma Modulator; low voltage},
}
%0 Conference Proceedings
%T A 0.8V ΔΣ modulator using DTMOS technique
%A Maymandi Nejad, Mohammad
%A Manoj Sachdev
%J IEEE International Symposium on Circuits and Systems-ISCAS 2005
%D 2005
