This report reviews the feasibility of two-dimensional hydrodynamic models in bulk SiC and ZnO semiconductor materials. Although the single-gas hydrodynamic model is superior to the drift-diusion or energy balance model, it is desirable to direct the eorts of future research in the direction of multi-valley hydrodynamic models. The hydrodynamic model is able to describe inertia eects which play an increasing role in dierent elds of micro and optoelectronics where simplied charge transport models like the drift-diusion model and the energy balance model are no longer applicable. Results of extensive numerical simulations are shown for SiC and ZnO materials, which are in fair agreement with other theoretical or experimental methods.

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