Iterative technique is used to solve Boltzmann transport equation for calculating temperature and doping dependencies of electron mobility in ZnO and SiC materials. The two-mode nature of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, ionized impurity and electron-plasmon scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the electron distribution, and the screening effects of free carriers on the scattering probabilities are incorporated. It is shown that electron-plasmon scattering affects substantially the low-field electron mobility in bulk ZnO and SiC. It is found that the electron mobility decreases monotonically as the temperature increases from 300 - 600 K. The low temperature value of electron mobility increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.

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