The growth of thin and ultrathin Al O films on Si surfaces has become the largest for the 2 3 development of industrial processes towards the next generations of Si based electronics due to increased difficulty in scaling CMOS (Complementary Metal Oxide Semiconductor) for Integrated Circuits (Ics). Access to XRD (X-Ray Diffraction), SAM (Scanning Atomic Microscopy) and NMR (Nuclear Magnetic Resonance) facilities, using structural, atom-atom bonds studies of the process steps, allow us to analyze details of the reaction dynamics and structural properties of the Al O , Si and SiO films. The obtained results show Al O 2 3 2 2 3 29 is amorphous film without any intermediate SiO layer between Al O / Si.

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