Title : ( Comparison of electron transport properties in submicrometer ZnS and ZnO n+nn+ diode using ensemble Monte Carlo simulation )
Authors: M. R. Khalvati , Hadi Arabshahi , M. Izadifard , A. Mokhles Gerami , H. Rahimpour Soleimani ,
Full TextAbstract
An ensemble Monte Carlo simulation has been used for the simultaneous evaluation of the electronic steady-state transport in n+nn+ ZnS and ZnO diode. The anode voltage ranges from 0 to 4 V. Electronic states within the conduction band valleys are based on a three-valley model which are represented by nonparabolic ellipsoidal valleys centered on the important symmetry point of the first Brillouin zone. Our calculation shows that the saturation mean drift velocity for electrons in the channel of ZnO and ZnS are about 2 × 105 and 1.25 × 105 ms-1, respectively at a bias voltage of 4 V. It is shown also that the mean drift velocity in channel decrease sharply with increasing temperature in both structure and reach to saturated value about 1 × 105 and 0.6 × 105 ms-1 for ZnO and ZnS, respectively.
Keywords
, Ensemble Monte Carlo, ellipsoidal valleys, brillouin zone, drift velocity.
@article{paperid:1016556,
author = {M. R. Khalvati and Arabshahi, Hadi and M. Izadifard and A. Mokhles Gerami and H. Rahimpour Soleimani},
title = {Comparison of electron transport properties in submicrometer ZnS and ZnO n+nn+ diode using ensemble Monte Carlo simulation},
journal = {International Journal of Physical science},
year = {2010},
volume = {5},
number = {6},
month = {June},
issn = {1992-1950},
pages = {683--689},
numpages = {6},
keywords = {Ensemble Monte Carlo; ellipsoidal valleys; brillouin zone; drift velocity.},
}
%0 Journal Article
%T Comparison of electron transport properties in submicrometer ZnS and ZnO n+nn+ diode using ensemble Monte Carlo simulation
%A M. R. Khalvati
%A Arabshahi, Hadi
%A M. Izadifard
%A A. Mokhles Gerami
%A H. Rahimpour Soleimani
%J International Journal of Physical science
%@ 1992-1950
%D 2010
