Materials Science in Semiconductor Processing, ( ISI ), Volume (2010), No (13), Year (2010-5) , Pages (162-166)

Title : ( Influence of N2- and Ar-ambient annealing on the physical properties of SnO2: Co transparent conducting films prepared by spray pyrolysis technique )

Authors: ahmad gholizadeh , Nasser Tajabor ,

Citation: BibTeX | EndNote

Abstract

Co-doped SnO2 TCOs were prepared by spray pyrolysis technique and the influence of N2- and Ar-ambient annealing on their structural, electrical and optical properties was studied. XRD results show that all samples become single phase after post-annealing treatments. In addition, the Co-doped films exhibit a faceting characteristic that is conserved after the post-annealing treatments. Analysis of the XRD patterns shows that the size of crystallite decreases with increasing microstrain and both of them reach extremum at about 20 at% doping level. Electrical measurements demonstrate gradual increase in resistivity with increasing doping level. The annealing causes increase in the electrical resistivity of the cobalt-doped samples. About 40% of this increase should be due to penetration of nitrogen ions within the rutile structure and the remaining 60% may be attributed to the structural and compositional relaxations. The optical spectra show that transparency of the samples in the visible region decreases between 10% and 40% with increasing cobalt content. Although transparency of the samples at lower than 30 at% doping level slightly increases after post-annealing treatments, this increase is compensated for by compositional relaxations in the samples with more cobalt content. The band gap energies are increased by about 1.5% by post annealing treatment.

Keywords

Transparent conducting oxide Dilute magnetic semiconductors Spray pyrolysis
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@article{paperid:1021200,
author = {Gholizadeh, Ahmad and Tajabor, Nasser},
title = {Influence of N2- and Ar-ambient annealing on the physical properties of SnO2: Co transparent conducting films prepared by spray pyrolysis technique},
journal = {Materials Science in Semiconductor Processing},
year = {2010},
volume = {2010},
number = {13},
month = {May},
issn = {1369-8001},
pages = {162--166},
numpages = {4},
keywords = {Transparent conducting oxide Dilute magnetic semiconductors Spray pyrolysis},
}

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%0 Journal Article
%T Influence of N2- and Ar-ambient annealing on the physical properties of SnO2: Co transparent conducting films prepared by spray pyrolysis technique
%A Gholizadeh, Ahmad
%A Tajabor, Nasser
%J Materials Science in Semiconductor Processing
%@ 1369-8001
%D 2010

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