Title : ( Monte Carlo Simulation of Electron Transport Properties in Submicron GaN and ZnO n+-n –n+ Diodes )
Authors: M. Mahmoodi , Hadi Arabshahi ,
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Abstract
The steady-state electron transport in GaN and ZnO n+-n –n+ diode with 0.25 µm-long active layer was studied using Monte Carlo simulation. Effect of bias voltage changing and different temperature were calculated on electron distribution, potential, electric field and electron drift velocity as a function of distance between anode and cathode. The electron transport characteristics of the two materials are compared and the advantage of the GaN is proved which is in fair agreement with other experimental works.
Keywords
, Steady, state; active layer; electron drift velocity.
@article{paperid:1023173,
author = {M. Mahmoodi and Arabshahi, Hadi},
title = {Monte Carlo Simulation of Electron Transport Properties in Submicron GaN and ZnO n+-n –n+ Diodes},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {6},
month = {August},
issn = {2221-8386},
pages = {64--67},
numpages = {3},
keywords = {Steady-state; active layer; electron drift velocity.},
}
%0 Journal Article
%T Monte Carlo Simulation of Electron Transport Properties in Submicron GaN and ZnO n+-n –n+ Diodes
%A M. Mahmoodi
%A Arabshahi, Hadi
%J International Journal of Science and Advanced Technology
%@ 2221-8386
%D 2011
