We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel. We call this new structure as Recessed PBuffer (RPB) SiC MESFET. The proposed structure has the narrower channel near the source and thicker channel near the drain in comparison with the Conventional-Recessed Gate (CRG) SiC MESFET. The narrow channel at the source side of the proposed structure, improves maximum DC transconductance, gate-source capacitance, cut off frequency, and maximum DC output conductance compared to the CRG structure. Also, due to the thick channel at the drain side, the channel saturation drain current is higher than that in the CRG structure.

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