A dual material gate structure for a 4H-SiC MOSFET have been proposed as a possible way to reduce short channel effects such as DIBL, hot electron effects, and high electric fields. The gate of the DMG (Dual Material Gate) 4H-SiC MOSFET consists of two laterally contacting metals with different work functions in such a way that the threshold voltage near the source is more positive than that near the drain and thus the charge carrier more rapidly move in the channel. Lower work function gate at the drain side causes screening the drain voltage, which suppresses short-channel effects. Moreover, it is shown that dual material transistor has higher breakdown voltage.

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