Superlattices and Microstructures, ( ISI ), Volume (60), No (1), Year (2013-1) , Pages (516-523)

Title : ( A novel 4H–SiC MESFET with recessed gate and channel )

Authors: S. M. Razavi , S. H. Zahiri , Seyed Ebrahim Hosseini ,

Citation: BibTeX | EndNote

Abstract

New structures named as recessed gate and channel (RGC) silicon carbide (SiC) based metal semiconductor field effect transistors (MESFETs) are reported in this paper, in which the gate is recessed into the channel, and the channel is recessed into the p-buffer layer at the source and/or the drain side. Important parameters such as short channel effect, maximum DC trans-conductance (gm), drain current, breakdown voltage and output resistance of the proposed structures are simulated and compared with the conventional 4H–SiC MESFET. Simulation results disclose that, compared to the conventional structure, the structure with recessed full gate and channel (FGC): 1. Improves the DC trans-conductance (gm). 2. Increases the output resistance. 3. Enhances the breakdown voltage. 4. Reduces the short channel effect. Moreover, source side recessed gate and drain side recessed channel (SG–DC) structure has higher gm and output resistance in comparison with the conventional structure. Drain side recessed gate and source side recessed channel (DG–SC) structure has larger breakdown voltage and drain current than those of the conventional structure.

Keywords

, recessed gate and channel 4H–SiC MESFET DC trans, conductance Short channel effect Breakdown voltage Output resistance
برای دانلود از شناسه و رمز عبور پرتال پویا استفاده کنید.

@article{paperid:1035084,
author = {S. M. Razavi and S. H. Zahiri and Hosseini, Seyed Ebrahim},
title = {A novel 4H–SiC MESFET with recessed gate and channel},
journal = {Superlattices and Microstructures},
year = {2013},
volume = {60},
number = {1},
month = {January},
issn = {0749-6036},
pages = {516--523},
numpages = {7},
keywords = {recessed gate and channel 4H–SiC MESFET DC trans-conductance Short channel effect Breakdown voltage Output resistance},
}

[Download]

%0 Journal Article
%T A novel 4H–SiC MESFET with recessed gate and channel
%A S. M. Razavi
%A S. H. Zahiri
%A Hosseini, Seyed Ebrahim
%J Superlattices and Microstructures
%@ 0749-6036
%D 2013

[Download]